2000 Feb 09 9
Philips Semiconductors Product specification
2 × 25 W high efficiency car radio power
amplifier
TDA1563Q
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
=4Ω; CSE = 1000 µF; f = 1 kHz; T
amb
=25°C; measured in Fig.7; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on V
P
.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of R
s
.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
P
o
output power THD = 0.5% 15 19 − W
THD = 10% 23 25 − W
EIAJ − 38 − W
V
P
= 13.2 V; THD = 0.5% − 16 − W
V
P
= 13.2 V; THD = 10% − 20 − W
THD total harmonic distortion P
o
= 1 W; note 1 − 0.1 − %
P
d
dissipated power see Figs 10 and 11 W
B
p
power bandwidth THD = 1%; P
o
= −1dB
with respect to 15 W
− 20 to 15 000 − Hz
f
ro(l)
low frequency roll-off −1 dB; note 2 − 25 − Hz
f
ro(h)
high frequency roll-off −1 dB 130 −−kHz
G
v
closed loop voltage gain P
o
= 1 W 25 26 27 dB
SVRR supply voltage ripple rejection R
s
=0Ω; V
ripple
= 2 V (p-p)
on/mute 45 65 − dB
standby; f = 100 Hz to 10 kHz 80 −−dB
CMRR common mode rejection ratio R
s
=0Ω−80 − dB
Z
i
input impedance 90 120 150 kΩ
∆Z
i
mismatch in input impedance − 1 − %
V
SE-BTL
SE to BTL switch voltage level note 3 − 3 − V
V
o(mute)
output voltage mute (RMS value) V
i
= 1 V (RMS) − 100 150 µV
V
n(o)
noise output voltage on; R
s
=0Ω; note 4 − 100 150 µV
on; R
s
=10kΩ; note 4 − 105 −µV
mute; note 5 − 100 150 µV
α
cs
channel separation R
s
=0Ω; P
o
=15W 40 70 − dB
∆G
v
channel unbalance −− 1dB